STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES

被引：1752

作者：

CARD, HC

RHODERICK, EH

机构：

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1971年 / 4卷 / 10期

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D O I：

10.1088/0022-3727/4/10/319

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：1589 / +

页数：1

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