LARGE AREA SILICON JUNCTIONS BY EPITAXIAL GROWTH TECHNIQUE

[1] BENSON KE, 1965, ELECTROCHEM TECHNOL, V3, P332

[2] BHOLA SR, 1963, RCA REV, V24, P511

[3] BROCK GE, 1963, METALLURGICAL SOC ED, V19, P207

[4] EPITAXIAL GROWTH OF SILICON ON SILICON WEBS AND SILICON SLICES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) : 717 - &

[5] CHU TL, 1966, PHYSICS FAILURE ELEC, V4, P242

[6] CHU TL, 1963, METALLURGICAL SOCIET, V19, P207

[7] FAUST JW, 1966, PHYS FAIL ELECTRON, V4, P367

[8] GOLDBERG ME, 1966, PHYSICS FAILURE E ED, V4, P242

[9] GOLDBERG ME, 1966, PHYSICS FAILURE E ED, V4, P367

[10] GETTERING OF METALLIC IMPURITIES FROM PLANAR SILICON DIODES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) : 533 - 537

[1] BENSON KE, 1965, ELECTROCHEM TECHNOL, V3, P332

[2] BHOLA SR, 1963, RCA REV, V24, P511

[3] BROCK GE, 1963, METALLURGICAL SOC ED, V19, P207

[4] EPITAXIAL GROWTH OF SILICON ON SILICON WEBS AND SILICON SLICES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (07) : 717 - &

[5] CHU TL, 1966, PHYSICS FAILURE ELEC, V4, P242

[6] CHU TL, 1963, METALLURGICAL SOCIET, V19, P207

[7] FAUST JW, 1966, PHYS FAIL ELECTRON, V4, P367

[8] GOLDBERG ME, 1966, PHYSICS FAILURE E ED, V4, P242

[9] GOLDBERG ME, 1966, PHYSICS FAILURE E ED, V4, P367

[10] GETTERING OF METALLIC IMPURITIES FROM PLANAR SILICON DIODES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) : 533 - 537