EPITAXIAL GROWTH OF SILICON ON SILICON WEBS AND SILICON SLICES

[1] ALLEGRETTI JG, 1961, METALLURGY ELEMENTAL, V12, P255

[2] BEAN K, 1963, J ELECTROCHEM SOC, V110, pC265

[3] KINETICS OF SILICON CRYSTAL GROWTH FROM SICL4 DECOMPOSITION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (12) : 1171 - 1175

[4] WATER VAPOR AS AN ETCHANT FOR SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (11) : 1306 - 1307

[5] STACKING FAULTS IN VAPOR GROWN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (05) : 388 - 393

[6] DERMATIS SN, 1963, IEEE T COMMUN ELECTR, V65, P194

[7] DERMATIS SN, 1962, ELECTROCHEM SOC ELEC, V11, P123

[8] GLANG R, 1962, METALLURGY SEMICONDU, V15, P27

[9] PREPARATION OF SILICON RIBBONS [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (11) : 2489 - &

[10] GRUBEL RO, 1961, METALLURGY ELEMEN ED, V12, P285

[1] ALLEGRETTI JG, 1961, METALLURGY ELEMENTAL, V12, P255

[2] BEAN K, 1963, J ELECTROCHEM SOC, V110, pC265

[3] KINETICS OF SILICON CRYSTAL GROWTH FROM SICL4 DECOMPOSITION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (12) : 1171 - 1175

[4] WATER VAPOR AS AN ETCHANT FOR SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (11) : 1306 - 1307

[5] STACKING FAULTS IN VAPOR GROWN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (05) : 388 - 393

[6] DERMATIS SN, 1963, IEEE T COMMUN ELECTR, V65, P194

[7] DERMATIS SN, 1962, ELECTROCHEM SOC ELEC, V11, P123

[8] GLANG R, 1962, METALLURGY SEMICONDU, V15, P27

[9] PREPARATION OF SILICON RIBBONS [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (11) : 2489 - &

[10] GRUBEL RO, 1961, METALLURGY ELEMEN ED, V12, P285