GETTERING OF METALLIC IMPURITIES FROM PLANAR SILICON DIODES

[1] Geller R.F., 1934, J RES NBS, V13, P243

[2] GIELISSE PJ, 1959, 9312 OH STAT U REP

[3] METAL PRECIPITATES IN SILICON P-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (10) : 1821 - 1824

[4] Prussin S., 1961, J APPL PHYS, V32, P1876, DOI [10.1063/1.1728256, DOI 10.1063/1.1728256]

[5] SLIP PATTERNS ON BORON-DOPED SILICON SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (09) : 1776 - &

[6] QUEISSER HJ, 1961, B AM PHYS SOC, V6, P106

[7] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243

[8] SOLUBILITY OF FLAWS IN HEAVILY-DOPED SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1960, 119 (05): : 1480 - 1482

[1] Geller R.F., 1934, J RES NBS, V13, P243

[2] GIELISSE PJ, 1959, 9312 OH STAT U REP

[3] METAL PRECIPITATES IN SILICON P-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (10) : 1821 - 1824

[4] Prussin S., 1961, J APPL PHYS, V32, P1876, DOI [10.1063/1.1728256, DOI 10.1063/1.1728256]

[5] SLIP PATTERNS ON BORON-DOPED SILICON SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (09) : 1776 - &

[6] QUEISSER HJ, 1961, B AM PHYS SOC, V6, P106

[7] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243

[8] SOLUBILITY OF FLAWS IN HEAVILY-DOPED SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1960, 119 (05): : 1480 - 1482