CHEMICALLY VAPOR-DEPOSITED POLYCRYSTALLINE-SILICON FILMS

[1] MICROSTRUCTURAL ANALYSIS OF EVAPORATED AND PYROLYTIC SILICON THIN-FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) : 1540 - 1546

[2] THERMAL AND ELECTRICAL ANISOTROPY OF POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (05) : 2358 - +

[3] KINETICS OF INDUCTION PERIOD FOR NUCLEATION OF SILICON ON SI(111) SUBSTRATES AT U-H-V [J]. PHILOSOPHICAL MAGAZINE, 1970, 22 (175): : 135 - &

[4] STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS [J]. PHYSICAL REVIEW B, 1970, 1 (06): : 2632 - &

[5] CHU TL, 1974, 1974 SPRING EL SOC M

[6] ENHANCEMENT OF BREAKDOWN PROPERTIES OF OVERLAY ANNULAR DIODES BY FIELD SHAPING RESISTIVE FILMS [J]. SOLID-STATE ELECTRONICS, 1972, 15 (06) : 653 - +

[7] COLLINS FM, 1961, 8 T NATL VAC S, V2, P899

[8] CHEMICAL VAPOR DEPOSITED POLYCRYSTALLINE SILICON. [J]. 1600, (119):

[9] DIELECTRIC ISOLATED INTEGRATED CIRCUIT SUBSTRATE PROCESSES [J]. PROCEEDINGS OF THE IEEE, 1969, 57 (09) : 1532 - &

[10] DeLuca R. D., 1969, Semiconductor silicon, P299

[1] MICROSTRUCTURAL ANALYSIS OF EVAPORATED AND PYROLYTIC SILICON THIN-FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) : 1540 - 1546

[2] THERMAL AND ELECTRICAL ANISOTROPY OF POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (05) : 2358 - +

[3] KINETICS OF INDUCTION PERIOD FOR NUCLEATION OF SILICON ON SI(111) SUBSTRATES AT U-H-V [J]. PHILOSOPHICAL MAGAZINE, 1970, 22 (175): : 135 - &

[4] STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS [J]. PHYSICAL REVIEW B, 1970, 1 (06): : 2632 - &

[5] CHU TL, 1974, 1974 SPRING EL SOC M

[6] ENHANCEMENT OF BREAKDOWN PROPERTIES OF OVERLAY ANNULAR DIODES BY FIELD SHAPING RESISTIVE FILMS [J]. SOLID-STATE ELECTRONICS, 1972, 15 (06) : 653 - +

[7] COLLINS FM, 1961, 8 T NATL VAC S, V2, P899

[8] CHEMICAL VAPOR DEPOSITED POLYCRYSTALLINE SILICON. [J]. 1600, (119):

[9] DIELECTRIC ISOLATED INTEGRATED CIRCUIT SUBSTRATE PROCESSES [J]. PROCEEDINGS OF THE IEEE, 1969, 57 (09) : 1532 - &

[10] DeLuca R. D., 1969, Semiconductor silicon, P299