KINETICS OF INDUCTION PERIOD FOR NUCLEATION OF SILICON ON SI(111) SUBSTRATES AT U-H-V

被引：15

作者：

BENNETT, RJ

GALE, RW

机构：

来源：

PHILOSOPHICAL MAGAZINE | 1970年 / 22卷 / 175期

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D O I：

10.1080/14786437008228158

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：135 / &

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