GROWTH OF EPITAXIAL SILICON LAYERS BY VACUUM EVAPORATION .I. EXPERIMENTAL PROCEDURE + INITIAL ASSESSMENT

被引：50

作者：

UNVALA, BA

BOOKER, GR

机构：

来源：

PHILOSOPHICAL MAGAZINE | 1964年 / 9卷 / 100期

关键词：

D O I：

10.1080/14786436408211881

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：691 / &

共 17 条

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[4]

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[7]

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[8] STRUCTURE AND ORIGIN OF STACKING FAULTS IN EPITAXIAL SILICON [J].

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THOMAS, G .

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[9]

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[10]

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