A STUDY OF NUCLEATION IN CHEMICALLY GROWN EPITAXIAL SILICON FILMS USING MOLECULAR BEAM TECHNIQUES .3. NUCLEATION RATE MEASUREMENTS AND EFFECT OF OXYGEN ON INITIAL GROWTH BEHAVIOUR

被引：127

作者：

JOYCE, BA

BRADLEY, RR

BOOKER, GR

机构：

来源：

PHILOSOPHICAL MAGAZINE | 1967年 / 15卷 / 138期

关键词：

D O I：

10.1080/14786436708222757

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1167 / &

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