GROWTH OF EPITAXIAL SILICON LAYERS BY VACUUM EVAPORATION .2. INITIAL NUCLEATION AND GROWTH

被引：29

作者：

BOOKER, GR

UNVALA, BA

机构：

来源：

PHILOSOPHICAL MAGAZINE | 1965年 / 11卷 / 109期

关键词：

D O I：

10.1080/14786436508211921

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：11 / &

共 29 条

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[3] BATSFORD KO, 1963, ELECT COMMUN, V38, P354
[4] VACUUM EVAPORATED SILICON LAYERS FREE FROM STACKING FAULTS
BOOKER, GR
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[7] BOOKER GR, 1964, 3 P EUR REG C EL MIC, P383
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[10] METHOD FOR MEASURING THICKNESS OF EPITAXIAL SILICON FILMS
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