A STUDY OF NUCLEATION IN CHEMICALLY GROWN EPITAXIAL SILICON FILMS USING MOLECULAR BEAM TECHNIQUES .2. INITIAL GROWTH BEHAVIOUR ON CLEAN AND CARBON-CONTAMINATED SILICON SUBSTRATES

被引：72

作者：

BOOKER, GR

JOYCE, BA

机构：

来源：

PHILOSOPHICAL MAGAZINE | 1966年 / 14卷 / 128期

关键词：

D O I：

10.1080/14786436608219013

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：301 / &

共 15 条

[1] TRIPYRAMIDS AND ASSOCIATED DEFECTS IN EPITAXIAL SILICON LAYERS
BOOKER, GR
[J]. PHILOSOPHICAL MAGAZINE, 1965, 11 (113): : 1007 - &
[2] GROWTH OF EPITAXIAL SILICON LAYERS BY VACUUM EVAPORATION .2. INITIAL NUCLEATION AND GROWTH
BOOKER, GR
UNVALA, BA
[J]. PHILOSOPHICAL MAGAZINE, 1965, 11 (109): : 11 - &
[3] METHOD OF PREPARING SI AND GE SPECIMENS FOR EXAMINATION BY TRANSMISSION ELECTRON MICROSCOPY
BOOKER, GR
STICKLER, R
[J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1962, 13 (09): : 446 - &
[4] GROWTH MECHANISM AND DEFECT STRUCTURES IN EPITAXIAL SILICON
CHARIG, JM
BICKNELL, RW
STIRLAND, DJ
JOYCE, BA
[J]. PHILOSOPHICAL MAGAZINE, 1962, 7 (83): : 1847 - &
[5] DOUBLE POSITIONING IN SILVER AND GOLD LAYERS DEPOSITED ON MICA
DICKSON, EW
PASHLEY, DW
[J]. PHILOSOPHICAL MAGAZINE, 1962, 7 (80): : 1315 - &
[6] FARNSWORTH HE, 1960, SOLID STATE PHYSICS, V1, P602
[7] FARNSWORTH HE, 1959, J PHYS CHEM SOLIDS, V8, P116
[8] HALE AP, 1963, VACUUM, V13, P93
[9] EPITAXIAL GROWTH OF SILICON FROM THE PYROLYSIS OF MONOSILANE ON SILICON SUBSTRATES
JOYCE, BA
BRADLEY, RR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (12) : 1235 - 1240
[10] A STUDY OF NUCLEATION IN CHEMICALLY GROWN EPITAXIAL SILICON FILMS USING MOLECULAR BEAM TECHNIQUES .I. EXPERIMENTAL METHODS
JOYCE, BA
BRADLEY, RR
[J]. PHILOSOPHICAL MAGAZINE, 1966, 14 (128) : 289 - +