TRIPYRAMIDS AND ASSOCIATED DEFECTS IN EPITAXIAL SILICON LAYERS

[1] BATSFORD KO, 1963, ELECT COMMUN, V38, P354

[2] GROWTH OF EPITAXIAL SILICON LAYERS BY VACUUM EVAPORATION .2. INITIAL NUCLEATION AND GROWTH [J]. PHILOSOPHICAL MAGAZINE, 1965, 11 (109): : 11 - &

[3] CRYSTALLOGRAPHIC IMPERFECTIONS IN EPITAXIALLY GROWN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (11) : 3281 - &

[4] METHOD OF PREPARING SI AND GE SPECIMENS FOR EXAMINATION BY TRANSMISSION ELECTRON MICROSCOPY [J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1962, 13 (09): : 446 - &

[5] BOOKER GR, IN PRESS

[6] BOOKER GR, 1964, GENERAL DISCUSSIONS

[7] BOOKER GR, 1964, 3 P EUR REG C EL MIC, P383

[8] STRUCTURAL IMPERFECTION IN VAPOUR-GROWN SILICON [J]. PHILOSOPHICAL MAGAZINE, 1964, 9 (102): : 993 - &

[9] STACKING FAULTS IN VAPOR GROWN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (05) : 388 - 393

[10] DOUBLE POSITIONING IN SILVER AND GOLD LAYERS DEPOSITED ON MICA [J]. PHILOSOPHICAL MAGAZINE, 1962, 7 (80): : 1315 - &

[1] BATSFORD KO, 1963, ELECT COMMUN, V38, P354

[2] GROWTH OF EPITAXIAL SILICON LAYERS BY VACUUM EVAPORATION .2. INITIAL NUCLEATION AND GROWTH [J]. PHILOSOPHICAL MAGAZINE, 1965, 11 (109): : 11 - &

[3] CRYSTALLOGRAPHIC IMPERFECTIONS IN EPITAXIALLY GROWN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (11) : 3281 - &

[4] METHOD OF PREPARING SI AND GE SPECIMENS FOR EXAMINATION BY TRANSMISSION ELECTRON MICROSCOPY [J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1962, 13 (09): : 446 - &

[5] BOOKER GR, IN PRESS

[6] BOOKER GR, 1964, GENERAL DISCUSSIONS

[7] BOOKER GR, 1964, 3 P EUR REG C EL MIC, P383

[8] STRUCTURAL IMPERFECTION IN VAPOUR-GROWN SILICON [J]. PHILOSOPHICAL MAGAZINE, 1964, 9 (102): : 993 - &

[9] STACKING FAULTS IN VAPOR GROWN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (05) : 388 - 393

[10] DOUBLE POSITIONING IN SILVER AND GOLD LAYERS DEPOSITED ON MICA [J]. PHILOSOPHICAL MAGAZINE, 1962, 7 (80): : 1315 - &