STRUCTURAL IMPERFECTION IN VAPOUR-GROWN SILICON

被引：19

作者：

CHU, TL

GAVALER, JR

机构：

来源：

PHILOSOPHICAL MAGAZINE | 1964年 / 9卷 / 102期

关键词：

D O I：

10.1080/14786436408211910

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：993 / &

共 10 条

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CHU, TL ;

GAVALER, JR .

[2]

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[3] COPPER PRECIPITATION ON DISLOCATIONS IN SILICON [J].

DASH, WC .

[4]

KASPER JS, 1959, INTERNATIONAL TABLES, V2, P63

[5]

LIGHT TB, 1962, METALLURGY SEMICONDU, V15, P137

[6] STRUCTURE DEFECTS IN PYROLTIC SILICON EPITAXIAL FILMS [J].

MILLER, DP ;

MOORE, CR ;

WATELSKI, SB .

[7]

REIZMAN F, 1962, METALLURGY SEMICONDU, V15, P169

[8]

SIRTL E, 1961, Z METALLKD, V52, P529

[9] EPITAXIAL SILICON FILMS BY THE HYDROGEN REDUCTION OF SIC1 [J].

THEUERER, HC .

[10]

TUNG SK, 1962, METALLURGY SEMICONDU, V15, P87