STRUCTURE DEFECTS IN PYROLTIC SILICON EPITAXIAL FILMS

[1] BATSFORD KO, PRIVATE COMMUNICATIO

[2] CRYSTALLOGRAPHIC IMPERFECTIONS IN EPITAXIALLY GROWN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (11) : 3281 - &

[3] GROWTH MECHANISM AND DEFECT STRUCTURES IN EPITAXIAL SILICON [J]. PHILOSOPHICAL MAGAZINE, 1962, 7 (83): : 1847 - &

[4] CHU TL, 1963, 1962 C ADV EL MAT PH, V6

[5] Ewald PP, 1917, ANN PHYS-BERLIN, V54, P519

[6] Ewald PP, 1916, ANN PHYS-BERLIN, V49, P1

[7] Ewald PP, 1916, ANN PHYS-BERLIN, V49, P117

[8] STRUCTURE AND ORIGIN OF STACKING FAULTS IN EPITAXIAL SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) : 406 - &

[9] DISLOCATIONS IN THE DIAMOND LATTICE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 5 (1-2) : 129 - 141

[10] LIGHT TB, 1962, 1961 MET SEM MAT LOS, V5, P137

[1] BATSFORD KO, PRIVATE COMMUNICATIO

[2] CRYSTALLOGRAPHIC IMPERFECTIONS IN EPITAXIALLY GROWN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (11) : 3281 - &

[3] GROWTH MECHANISM AND DEFECT STRUCTURES IN EPITAXIAL SILICON [J]. PHILOSOPHICAL MAGAZINE, 1962, 7 (83): : 1847 - &

[4] CHU TL, 1963, 1962 C ADV EL MAT PH, V6

[5] Ewald PP, 1917, ANN PHYS-BERLIN, V54, P519

[6] Ewald PP, 1916, ANN PHYS-BERLIN, V49, P1

[7] Ewald PP, 1916, ANN PHYS-BERLIN, V49, P117

[8] STRUCTURE AND ORIGIN OF STACKING FAULTS IN EPITAXIAL SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) : 406 - &

[9] DISLOCATIONS IN THE DIAMOND LATTICE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 5 (1-2) : 129 - 141

[10] LIGHT TB, 1962, 1961 MET SEM MAT LOS, V5, P137