PERFECTION OF EXPITAXIAL SILICON LAYERS GROWN BY PYROLYSIS OF SILANE

被引：4

作者：

BOOKER, GR

JOYCE, BA

BRADLEY, RR

机构：

来源：

PHILOSOPHICAL MAGAZINE | 1964年 / 10卷 / 108期

关键词：

D O I：

10.1080/14786436408225416

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1087 / &

共 6 条

[1] VACUUM EVAPORATED SILICON LAYERS FREE FROM STACKING FAULTS [J].

BOOKER, GR ;

UNVALA, BA .

PHILOSOPHICAL MAGAZINE, 1963, 8 (93) :1597-&

[2]

BOOKER GR, IN PRESS

[3] GROWTH MECHANISM AND DEFECT STRUCTURES IN EPITAXIAL SILICON [J].

CHARIG, JM ;

BICKNELL, RW ;

STIRLAND, DJ ;

JOYCE, BA .

PHILOSOPHICAL MAGAZINE, 1962, 7 (83) :1847-&

JOYCE, BA ;

BRADLEY, RR .

[5] MICROPLASMA BREAKDOWN AT STAIR-ROD DISLOCATIONS IN SILICON [J].

QUEISSER, HJ ;

GOETZBERGER, A .

PHILOSOPHICAL MAGAZINE, 1963, 8 (90) :1063-&

[6]

UNVALA BA, 1963, PHIL MAG, V9, P691