ENHANCEMENT OF BREAKDOWN PROPERTIES OF OVERLAY ANNULAR DIODES BY FIELD SHAPING RESISTIVE FILMS

被引：28

作者：

CLARK, LE

ZOROGLU, DS

机构：

来源：

SOLID-STATE ELECTRONICS | 1972年 / 15卷 / 06期

关键词：

D O I：

10.1016/0038-1101(72)90008-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：653 / +

页数：1

相关论文

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