CONTROL OF ELECTRIC FIELD AT SURFACE OF P-N JUNCTIONS

被引：116

作者：

DAVIES, RL

GENTRY, FE

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1964年 / ED11卷 / 07期

关键词：

D O I：

10.1109/T-ED.1964.15335

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：313 / +

页数：1

共 27 条

[1]

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[2]

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[4]

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[6] SOME EXPERIMENTS ON, AND A THEORY OF, SURFACE BREAKDOWN [J].

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BRATTAIN, WH .

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[7] AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .2. STRUCTURALLY PERFECT JUNCTIONS [J].

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[8] UNIFORM AVALANCHE EFFECT IN SILICON 3-LAYER DIODES [J].

GOETZBERGER, A .

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[9] AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .1. LOCALIZED PHOTOMULTIPLICATION STUDIES ON MICROPLASMAS [J].

HAITZ, RH ;

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[10]

Holmes P. J., 1962, ELECTROCHEMISTRY SEM

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