EFFECT OF SURFACE FIELDS ON BREAKDOWN VOLTAGE OF PLANAR SILICON P-N JUNCTIONS

被引：155

作者：

GROVE, AS

LEISTIKO, O

HOOPER, WW

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1967年 / ED14卷 / 03期

关键词：

D O I：

10.1109/T-ED.1967.15916

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：157 / +

页数：1

相关论文

共 17 条

[1] Armstrong H. L., 1957, IRE T ELECTRON DEV, VED-4, P15
[2] BROWN GA, 1965, ELECTROCHEM SOC M SA
[3] ELECTRODE CONTROL OF SIO2-PASSIVATED PLANAR JUNCTIONS
CASTRUCCI, PP
LOGAN, JS
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) : 394 - &
[4] EFFECT OF VARIATIONS IN SURFACE POTENTIAL ON JUNCTION CHARACTERISTICS
FORSTER, JH
VELORIC, HS
[J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (06) : 906 - 914
[5] SOME EXPERIMENTS ON, AND A THEORY OF, SURFACE BREAKDOWN
GARRETT, CGB
BRATTAIN, WH
[J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (03) : 299 - 306
[6] ORIGIN OF CHANNEL CURRENTS ASSOCIATED WITH P+ REGIONS IN SILICON
GROVE, AS
FITZGERALD, DJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (12) : 619 - +
[7] SURFACE EFFECTS ON P-N JUNCTIONS - CHARACTERISTICS OF SURFACE SPACE-CHARGE REGIONS UNDER NON-EQUILIBRIUM CONDITIONS
GROVE, AS
FITZGERALD, DJ
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (08) : 783 - +
[8] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES
GROVE, AS
DEAL, BE
SNOW, EH
SAH, CT
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 145 - +
[9] SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR
HOFSTEIN, SR
HEIMAN, FP
[J]. PROCEEDINGS OF THE IEEE, 1963, 51 (09) : 1190 - &
[10] KORN GA, 1961, MATHEMATICAL HANDBOO