TRANSPORT PROPERTIES OF POLYCRYSTALLINE SILICON FILMS

被引：634

作者：

BACCARANI, G ^{[1
]}

RICCO, B ^{[1
]}

SPADINI, G ^{[1
]}

机构：

[1] CNR,LAMEL LAB,I-40126 BOLOGNA,ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 11期

关键词：

D O I：

10.1063/1.324477

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5565 / 5570

页数：6

共 10 条

[1]

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[8] THEORY OF AN EXPERIMENT FOR MEASURING THE MOBILITY AND DENSITY OF CARRIERS IN THE SPACE-CHARGE REGION OF A SEMICONDUCTOR SURFACE [J].

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[9] DEPOSITION OF POLYCRYSTALLINE SILICON BY PYROLYSIS OF SILANE IN ARGON [J].

SETO, JYW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (05) :701-706

[10] ELECTRICAL PROPERTIES OF POLYCRYSTALLINE SILICON FILMS [J].

SETO, JYW .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) :5247-5254

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