DEPENDENCE OF RESISTIVITY ON DOPING LEVEL OF POLYCRYSTALLINE SILICON

被引：68

作者：

FRIPP, AL ^{[1
]}

机构：

[1] NASA,LANGLEY RES CTR,HAMPTON,VA 23665

来源：

关键词：

D O I：

10.1063/1.321687

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1240 / 1244

页数：5

共 31 条

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