INFLUENCE OF ASH3, PH3, AND B2H6 ON GROWTH-RATE AND RESISTIVITY OF POLYCRYSTALLINE SILICON FILMS DEPOSITED FROM A SIH4-H2 MIXTURE

被引：147

作者：

EVERSTEY.FC ^{[1
]}

PUT, BH ^{[1
]}

机构：

[1] PHILIPS RES LABS,EINDHOVEN,NETHERLANDS

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1973年 / 120卷 / 01期

关键词：

D O I：

10.1149/1.2403378

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：106 / 110

页数：5

共 17 条

[1]

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[2]

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[3]

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[4]

EVERSTEIJN FC, 1971, PHILIPS RES REP, V26, P134

[5] INHIBITION OF SILICON GROWTH RATE DURING DEPOSITION OF ARSENIC-DOPED EPITAXIAL SILICON LAYERS ON SILICON BY PYROLYSIS OF SILANE [J].

FARROW, RFC ;

FILBY, JD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (01) :149-&

[6]

FORD KD, 1971, OCT EL SOC M CLEV

[7]

HENDERSON RC, 1971, OCT EXT ABS FALL M E

[8] EPITAXIAL GROWTH OF SILICON FROM THE PYROLYSIS OF MONOSILANE ON SILICON SUBSTRATES [J].

JOYCE, BA ;

BRADLEY, RR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (12) :1235-1240

[9] A STUDY OF NUCLEATION IN CHEMICALLY GROWN EPITAXIAL SILICON FILMS USING MOLECULAR BEAM TECHNIQUES .3. NUCLEATION RATE MEASUREMENTS AND EFFECT OF OXYGEN ON INITIAL GROWTH BEHAVIOUR [J].

JOYCE, BA ;

BRADLEY, RR ;

BOOKER, GR .

PHILOSOPHICAL MAGAZINE, 1967, 15 (138) :1167-&

[10] HALL MOBILITY IN CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON [J].

KAMINS, TI .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) :4357-&

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