PROPERTIES OF SILICON AND GERMANIUM .2.

[1] THEORY OF THE GALVANOMAGNETIC EFFECTS IN GERMANIUM [J]. PHYSICAL REVIEW, 1954, 95 (01): : 31 - 37

[2] THE OPTICAL CONSTANTS OF A SINGLE CRYSTAL OF GERMANIUM [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1953, 66 (402): : 512 - 513

[3] CONDUCTIVITY MOBILITIES OF ELECTRONS AND HOLES IN HEAVILY DOPED SILICON [J]. PHYSICAL REVIEW, 1957, 108 (06): : 1416 - 1419

[4] BARDEEN J, PHOTOCONDUCTIVITY C

[5] BEMSKI G, UNPUB J ELECTROCHEM

[6] HALL DRIFT MOBILITIES - THEIR RATIO AND TEMPERATURE DEPENDENCE IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1957, 105 (04): : 1203 - 1205

[7] ABSORPTION OF INFRARED LIGHT BY FREE CARRIERS IN GERMANIUM [J]. PHYSICAL REVIEW, 1953, 91 (06): : 1342 - 1346

[8] BURSTEIN E, 1956, PHOTOCONDUCTIVITY C

[9] IMPURITY CENTERS IN GE AND SI [J]. PHYSICA, 1954, 20 (10): : 845 - 854

[10] PROPERTIES OF SILICON DOPED WITH MANGANESE [J]. PHYSICAL REVIEW, 1956, 104 (04): : 937 - 941

[1] THEORY OF THE GALVANOMAGNETIC EFFECTS IN GERMANIUM [J]. PHYSICAL REVIEW, 1954, 95 (01): : 31 - 37

[2] THE OPTICAL CONSTANTS OF A SINGLE CRYSTAL OF GERMANIUM [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1953, 66 (402): : 512 - 513

[3] CONDUCTIVITY MOBILITIES OF ELECTRONS AND HOLES IN HEAVILY DOPED SILICON [J]. PHYSICAL REVIEW, 1957, 108 (06): : 1416 - 1419

[4] BARDEEN J, PHOTOCONDUCTIVITY C

[5] BEMSKI G, UNPUB J ELECTROCHEM

[6] HALL DRIFT MOBILITIES - THEIR RATIO AND TEMPERATURE DEPENDENCE IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1957, 105 (04): : 1203 - 1205

[7] ABSORPTION OF INFRARED LIGHT BY FREE CARRIERS IN GERMANIUM [J]. PHYSICAL REVIEW, 1953, 91 (06): : 1342 - 1346

[8] BURSTEIN E, 1956, PHOTOCONDUCTIVITY C

[9] IMPURITY CENTERS IN GE AND SI [J]. PHYSICA, 1954, 20 (10): : 845 - 854

[10] PROPERTIES OF SILICON DOPED WITH MANGANESE [J]. PHYSICAL REVIEW, 1956, 104 (04): : 937 - 941