ABSORPTION OF INFRARED LIGHT BY FREE CARRIERS IN GERMANIUM

[1] BARDEEN J, 1950, PHYS REV, V79, P216

[2] OPTICAL PROPERTIES OF SEMICONDUCTORS .3. INFRA-RED TRANSMISSION OF SILICON [J]. PHYSICAL REVIEW, 1949, 76 (10): : 1531 - 1532

[3] NEW INFRARED ABSORPTION BANDS IN P-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1952, 87 (06): : 1130 - 1131

[4] INFRA-RED ABSORPTION IN SILICON [J]. PHYSICAL REVIEW, 1950, 77 (05): : 727 - 728

[5] CONWELL E, 1952, P IRE, V40, P1330

[6] CRONEMEYER D, COMMUNICATION

[7] FAN HY, 1951, P READING C SEMICOND, P132

[8] THE MOBILITY AND LIFE OF INJECTED HOLES AND ELECTRONS IN GERMANIUM [J]. PHYSICAL REVIEW, 1951, 81 (05): : 835 - 843

[9] ELECTRONIC STRUCTURE OF THE GERMANIUM CRYSTAL [J]. PHYSICAL REVIEW, 1953, 89 (02): : 518 - 519

[10] KAISER, 1953, B AM PHYS SOC, V28, P32

[1] BARDEEN J, 1950, PHYS REV, V79, P216

[2] OPTICAL PROPERTIES OF SEMICONDUCTORS .3. INFRA-RED TRANSMISSION OF SILICON [J]. PHYSICAL REVIEW, 1949, 76 (10): : 1531 - 1532

[3] NEW INFRARED ABSORPTION BANDS IN P-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1952, 87 (06): : 1130 - 1131

[4] INFRA-RED ABSORPTION IN SILICON [J]. PHYSICAL REVIEW, 1950, 77 (05): : 727 - 728

[5] CONWELL E, 1952, P IRE, V40, P1330

[6] CRONEMEYER D, COMMUNICATION

[7] FAN HY, 1951, P READING C SEMICOND, P132

[8] THE MOBILITY AND LIFE OF INJECTED HOLES AND ELECTRONS IN GERMANIUM [J]. PHYSICAL REVIEW, 1951, 81 (05): : 835 - 843

[9] ELECTRONIC STRUCTURE OF THE GERMANIUM CRYSTAL [J]. PHYSICAL REVIEW, 1953, 89 (02): : 518 - 519

[10] KAISER, 1953, B AM PHYS SOC, V28, P32