DEPENDENCE OF RESISTIVITY ON DOPING LEVEL OF POLYCRYSTALLINE SILICON

[11] RESISTIVITY OF DOPED POLYCRYSTALLINE SILICON FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) : 145 - 146

[12] Grove A.S., 1967, PHYS TECHNOL S

[13] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +

[14] SURFACE ENERGY OF GERMANIUM AND SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) : 524 - 527

[15] RESISTIVITY OF CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON FILMS [J]. SOLID-STATE ELECTRONICS, 1972, 15 (03) : 355 - &

[16] HALL MOBILITY IN CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4357 - &

[17] DIFFUSION OF IMPURITIES IN POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (01) : 83 - &

[18] SOME PROPERTIES OF EVAPORATED SILICON FILMS [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1962, 17 (06) : 967 - &

[19] P-CHANNEL CHARGE-COUPLED DEVICES WITH RESISTIVE GATE STRUCTURE [J]. APPLIED PHYSICS LETTERS, 1972, 20 (12) : 514 - &

[20] KOSONOCKY WF, 1971, IEEE J SOLID STATE C, VSC 6, P314

[11] RESISTIVITY OF DOPED POLYCRYSTALLINE SILICON FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) : 145 - 146

[12] Grove A.S., 1967, PHYS TECHNOL S

[13] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +

[14] SURFACE ENERGY OF GERMANIUM AND SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) : 524 - 527

[15] RESISTIVITY OF CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON FILMS [J]. SOLID-STATE ELECTRONICS, 1972, 15 (03) : 355 - &

[16] HALL MOBILITY IN CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4357 - &

[17] DIFFUSION OF IMPURITIES IN POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (01) : 83 - &

[18] SOME PROPERTIES OF EVAPORATED SILICON FILMS [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1962, 17 (06) : 967 - &

[19] P-CHANNEL CHARGE-COUPLED DEVICES WITH RESISTIVE GATE STRUCTURE [J]. APPLIED PHYSICS LETTERS, 1972, 20 (12) : 514 - &

[20] KOSONOCKY WF, 1971, IEEE J SOLID STATE C, VSC 6, P314