RESISTIVITY OF CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON FILMS

被引：18

作者：

JOSEPH, JD

KAMINS, TI

机构：

来源：

SOLID-STATE ELECTRONICS | 1972年 / 15卷 / 03期

关键词：

D O I：

10.1016/0038-1101(72)90090-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：355 / &

共 10 条

[1] THERMAL AND ELECTRICAL ANISOTROPY OF POLYCRYSTALLINE SILICON [J].

BEAN, KE ;

HENTZSCHEL, HP ;

COLMAN, D .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (05) :2358-+

[2] STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS [J].

BRODSKY, MH ;

TITLE, RS ;

WEISER, K ;

PETTIT, GD .

PHYSICAL REVIEW B, 1970, 1 (06) :2632-&

[3]

CASS T, UNPUBLISHED

[4] SILICON GATE TECHNOLOGY [J].

FAGGIN, F ;

KLEIN, T .

SOLID-STATE ELECTRONICS, 1970, 13 (08) :1125-&

[5] STRUCTURE OF SILICON FILMS DEPOSITED ON OXIDIZED SILICON WAFERS [J].

FRIPP, AL ;

CATLIN, A ;

STERMER, RL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (12) :1569-&

[6]

KAMINS TI, TO BE PUBLISHED

[7]

KOBAYASHI I, 1971, IEEE T ELECTRON DEVI, VED18, P45

[8]

KOBAYASHI I, 1969, OCT INT EL DEV M WAS

[9] ELECTRONIC TRANSPORT IN AMORPHOUS SILICON FILMS [J].

LECOMBER, PG ;

SPEAR, WE .

PHYSICAL REVIEW LETTERS, 1970, 25 (08) :509-&

[10]

Van der Pauw L. J., 1958, PHILIPS RES REP, V12, P1

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