RECOMBINATION VELOCITY EFFECTS ON CURRENT DIFFUSION AND IMREF IN SCHOTTKY BARRIERS

被引：111

作者：

CROWELL, CR

BEGUWALA, M

机构：

来源：

SOLID-STATE ELECTRONICS | 1971年 / 14卷 / 11期

关键词：

D O I：

10.1016/0038-1101(71)90027-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1149 / &

共 15 条

[1]

BETHE HA, 1942, MIT4312 RAD LAB REP

[2] NORMALIZED THERMIONIC-FIELD (T-F) EMISSION IN METAL-SEMICONDUCTOR (SCHOTTKY) BARRIERS [J].

CROWELL, CR ;

RIDEOUT, VL .

SOLID-STATE ELECTRONICS, 1969, 12 (02) :89-&

[3] THERMIONIC-FIELD RESISTANCE MAXIMA IN METAL-SEMICONDUCTOR (SCHOTTKY) BARRIERS [J].

CROWELL, CR ;

RIDEOUT, VL .

APPLIED PHYSICS LETTERS, 1969, 14 (03) :85-&

[4] SURFACE-STATE AND INTERFACE EFFECTS IN SCHOTTKY BARRIERS AT N-TYPE SILICON SURFACES [J].

CROWELL, CR ;

SHORE, HB ;

LABATE, EE .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3843-&

[5] RICHARDSON CONSTANT FOR THERMIONIC EMISSION IN SCHOTTKY BARRIER DIODES [J].

CROWELL, CR .

SOLID-STATE ELECTRONICS, 1965, 8 (04) :395-&

[6] RICHARDSON CONSTANT AND TUNNELING EFFECTIVE MASS FOR THERMIONIC AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIER DIODES [J].

CROWELL, CR .

SOLID-STATE ELECTRONICS, 1969, 12 (01) :55-&

[7] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS [J].

CROWELL, CR ;

SZE, SM .

SOLID-STATE ELECTRONICS, 1966, 9 (11-1) :1035-&

[8]

LOHMANDER B, 1958, KUNGL FYSIOGR SALLSK, V28, P45

[9]

MOLL JL, 1964, PHYSICS SEMICONDUCTO, pCH7

[10]

PADOVANI FA, SEMICONDUCTORS SEMIM, pCH6

← 1 2 →