THERMIONIC-FIELD RESISTANCE MAXIMA IN METAL-SEMICONDUCTOR (SCHOTTKY) BARRIERS

被引:16
作者
CROWELL, CR
RIDEOUT, VL
机构
[1] Departments of Materials Science and Electrical Engineering, University of Southern California, Los Angeles
关键词
D O I
10.1063/1.1652732
中图分类号
O59 [应用物理学];
学科分类号
摘要
A maximum in the differential resistance versus applied bias relationship of metal-semiconductor contacts is predicted to occur when current flow is predominantly by thermionic-field (thermally excited tunnel) emission. The predicted resistance peaks are generally asymmetrical with respect to voltage and may occur on either side of zero bias. The peak location has only an indirect correlation with the Fermi kinetic energy in the semiconductor. The theoretical approach is generally applicable to any metal-semiconductor system when the dominant carrier flux is associated with the tail of a Fermi-Dirac distribution. The theory is in reasonable agreement with recent experimental resistance measurements on CrSingle Bond signSi Schottky barrier diodes at 77°K. © 1969 The American Institute of Physics.
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页码:85 / &
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