ELECTRON TUNNELING IN METAL-SEMICONDUCTOR BARRIERS

被引：124

作者：

CONLEY, JW

DUKE, CB

MAHAN, GD

TIEMANN, JJ

机构：

来源：

PHYSICAL REVIEW | 1966年 / 150卷 / 02期

关键词：

D O I：

10.1103/PhysRev.150.466

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：466 / &

共 19 条

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[2] CONLEY JJ, TO BE PUBLISHED
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DEXTER, RN
ZEIGER, HJ
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[4] NEW PHENOMENON IN NARROW GERMANIUM PARA-NORMAL-JUNCTIONS
ESAKI, L
[J]. PHYSICAL REVIEW, 1958, 109 (02): : 603 - 604
[5] THEORY OF ELECTRON TUNNELING IN SEMICONDUCTOR JUNCTIONS
FREDKIN, DR
WANNIER, GH
[J]. PHYSICAL REVIEW, 1962, 128 (05): : 2054 - &
[6] HENISCH HK, 1957, RECTIFYING SEMICONDU, pCH7
[7] THEORY OF TUNNELING
KANE, EO
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (01) : 83 - +
[8] ZENER TUNNELING IN SEMICONDUCTORS
KANE, EO
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 12 (02) : 181 - 188
[9] KELDYSH LV, 1958, SOV PHYS JETP-USSR, V6, P763
[10] KELDYSH LV, 1958, SOV PHYS JETP-USSR, V7, P665