ON THE TRANSPORT-THEORY OF SCHOTTKY BARRIERS TO POLYCRYSTALLINE SILICON THIN-FILMS

被引：27

作者：

CARD, HC

HWANG, W

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 04期

关键词：

D O I：

10.1109/T-ED.1980.19925

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：700 / 705

页数：6

共 15 条

[1] TRANSPORT PROPERTIES OF POLYCRYSTALLINE SILICON FILMS [J].

BACCARANI, G ;

RICCO, B ;

SPADINI, G .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) :5565-5570

[2] ELECTRONIC PROCESSES AT GRAIN-BOUNDARIES IN POLYCRYSTALLINE SEMICONDUCTORS UNDER OPTICAL ILLUMINATION [J].

CARD, HC ;

YANG, ES .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) :397-402

[3] EFFECT OF AN INTERFACIAL LAYER ON MINORITY-CARRIER INJECTION IN FORWARD-BIASED SILICON SCHOTTKY DIODES [J].

CARD, HC ;

RHODERICK, EH .

SOLID-STATE ELECTRONICS, 1973, 16 (03) :365-374

[4] REDUCTION OF GRAIN-BOUNDARY RECOMBINATION IN POLYCRYSTALLINE SILICON SOLAR-CELLS [J].

DISTEFANO, TH ;

CUOMO, JJ .

APPLIED PHYSICS LETTERS, 1977, 30 (07) :351-353

[5] MINORITY-CARRIER EFFECTS UPON SMALL-SIGNAL AND STEADY-STATE PROPERTIES OF SCHOTTKY DIODES [J].

GREEN, MA ;

SHEWCHUN, J .

SOLID-STATE ELECTRONICS, 1973, 16 (10) :1141-1150

[6]

GROVE AS, 1967, PHYSICS TECHNOLOGY S, P119

[7] ELECTRONIC PROPERTIES OF CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON [J].

HIROSE, M ;

TANIGUCHI, M ;

OSAKA, Y .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) :377-382

[8] HALL MOBILITY IN CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON [J].

KAMINS, TI .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) :4357-&

[9]

KORSH GJ, 1978, SOLID STATE ELECTRON, V21, P1045, DOI 10.1016/0038-1101(78)90183-1

[10] APPLICATION OF THE SUPERPOSITION PRINCIPLE TO SOLAR-CELL ANALYSIS [J].

LINDHOLM, FA ;

FOSSUM, JG ;

BURGESS, EL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (03) :165-171

← 1 2 →