LUMINESCENCE PECULIARITIES ON (ALGA)AS SINGLE QUANTUM-WELL

被引：9

作者：

OELGART, G ^{[1
]}

LEHMANN, L ^{[1
]}

ARAUJO, D ^{[1
]}

GANIERE, JD ^{[1
]}

REINHART, FK ^{[1
]}

机构：

[1] ECOLE POLYTECH FED LAUSANNE,INST MICRO & OPTOELECTR,CH-1015 LAUSANNE,SWITZERLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 03期

关键词：

D O I：

10.1063/1.351231

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper reports on single quantum well characterization by means of luminescence excited with a laser (photoluminescence) and an electron beam (cathodoluminescence) at liquid helium temperatures. Small quantum well regions with smaller confinement were observed. They seem to be associated with dislocations originated at the substrate. The observed shift of the X (e-hh) peak position versus the excitation level can be explained by luminescence generation in different lateral regions of the quantum well.

引用

页码：1552 / 1554

页数：3

共 6 条

[1] CATHODOLUMINESCENCE ATOMIC SCALE IMAGES OF MONOLAYER ISLANDS AT GAAS/GAALAS INTERFACES [J].

BIMBERG, D ;

CHRISTEN, J ;

FUKUNAGA, T ;

NAKASHIMA, H ;

MARS, DE ;

MILLER, JN .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :1191-1197

[2] CHARACTERIZATION OF MOCVD GROWN (AL, GA)AS/GAAS SINGLE QUANTUM WELL STRUCTURES BY RUTHERFORD BACKSCATTERING AND PHOTOLUMINESCENCE SPECTROSCOPY [J].

FLAGMEYER, R ;

OELGART, G ;

KREHER, K ;

SCHWABE, R ;

BUGGE, F ;

LEHMANN, L ;

JACOBS, K .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 111 (02) :541-550

[3] EXPERIMENTAL EXCITON BINDING-ENERGIES IN GAAS ALXGA1-XAS QUANTUM WELLS AS A FUNCTION OF WELL WIDTH [J].

KOTELES, ES ;

CHI, JY .

PHYSICAL REVIEW B, 1988, 37 (11) :6332-6335

[4] ATOMISTIC NATURE OF HETEROINTERFACES IN III-V SEMICONDUCTOR-BASED QUANTUM-WELL STRUCTURES AND ITS CONSEQUENCES FOR PHOTOLUMINESCENCE BEHAVIOR [J].

OGALE, SB ;

MADHUKAR, A ;

VOILLOT, F ;

THOMSEN, M ;

TANG, WC ;

LEE, TC ;

KIM, JY ;

CHEN, P .

PHYSICAL REVIEW B, 1987, 36 (03) :1662-1672

[5]

RICHTER W, 1986, ADV SOLID STATE PHYS, V26, P335

[6]

STUTZLER FJ, 1988, APPL PHYS LETT, V53, P1923, DOI 10.1063/1.100346

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