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DEPOSITION AND CHARACTERIZATION OF ZINC-OXIDE THIN-FILMS FOR HYDROGEN SENSOR DEVICES

被引：10
作者：
DUTTA, A [1 ]
CHAUDHURI, TK [1 ]
BASU, S [1 ]
机构：
[1] INDIAN INST TECHNOL,SEMICOND PREPARAT & PROC LAB,KHARAGPUR 721302,W BENGAL,INDIA
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1992年 / 14卷 / 01期
关键词：
D O I：
10.1016/0921-5107(92)90324-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Polycrystalline zinc oxide thin films with thicknesses in the range 0.3-mu-m-1-mu-m were deposited on silicon and alumina substrates by a spray chemical vapour deposition method. The film was characterized for crystallinity, resistivity and carrier concentration. A modified heterostructure Pd/ZnO(0.38-mu-m)/p-Si device was fabricated. The current-voltage characteristics of the device were studied both in the absence and in the presence of hydrogen gas.
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页码：31 / 35
页数：5
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