ELECTRON-RELAXATION EFFECTS IN TRANSFERRED-ELECTRON DEVICES REVEALED BY NEW SIMULATION METHOD

被引：31

作者：

JONES, D

REES, HD

机构：

来源：

ELECTRONICS LETTERS | 1972年 / 8卷 / 14期

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D O I：

10.1049/el:19720265

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：363 / &

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共 8 条

[1] THEORETICAL EFFICIENCY OF LSA MODE FOR GALLIUM ARSENIDE AT FREQUENCIES ABOVE 10GHZ
BUTCHER, PN
HEARN, CJ
[J]. ELECTRONICS LETTERS, 1968, 4 (21) : 459 - +
[2] CURTICE WR, 1970, IEEE T ELECTRON DEVI, VED17, P1048
[3] EASTMAN LF, 1970, 8 INT C MICR OPT GEN
[4] MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE
FAWCETT, W
BOARDMAN, AD
SWAIN, S
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (09) : 1963 - &
[5] DIRECT MICROSCOPIC SIMULATION OF GUNN-DOMAIN PHENOMENA
LEBWOHL, PA
PRICE, PJ
[J]. APPLIED PHYSICS LETTERS, 1971, 19 (12) : 530 - &
[6] HIGH-FIELD-CURRENT INSTABILITIES IN INP
PREW, BA
[J]. ELECTRONICS LETTERS, 1971, 7 (19) : 584 - &
[7] TIME RESPONSE OF HIGH-FIELD ELECTRON DISTRIBUTION FUNCTION IN GAAS
REES, HD
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1969, 13 (05) : 537 - &
[8] TAYLOR BC, 1971, IEEE T ELECTRON DEV, VED18, P835