TIME RESPONSE OF HIGH-FIELD ELECTRON DISTRIBUTION FUNCTION IN GAAS

被引:102
作者
REES, HD
机构
关键词
D O I
10.1147/rd.135.0537
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Techniques used in iterative calculation of steady-state and time- dependent high-field electron distribution function for GaAs, its small-signal frequency response and its behavior in large sinusoidal electric fields; calculations concentrate on frequency range from d-c to about 100 GHz; computed results for response speed, threshold field for negative conductivity, negative mobility, oscillator efficiency, and free-electron dielectric constant.
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页码:537 / &
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共 7 条
[1]   MONTE CARLO CALCULATION OF VELOCITY-FIELD RELATIONSHIP FOR GALLIUM ARSENIDE [J].
BOARDMAN, AD ;
FAWCETT, W ;
REES, HD .
SOLID STATE COMMUNICATIONS, 1968, 6 (05) :305-&
[2]   THEORETICAL EFFICIENCY OF LSA MODE FOR GALLIUM ARSENIDE AT FREQUENCIES ABOVE 10GHZ [J].
BUTCHER, PN ;
HEARN, CJ .
ELECTRONICS LETTERS, 1968, 4 (21) :459-+
[3]   CALCULATION OF VELOCITY-FIELD CHARACTERISTIC FOR GALLIUM ARSENIDE [J].
BUTCHER, PN ;
FAWCETT, W .
PHYSICS LETTERS, 1966, 21 (05) :489-&
[4]   MULTIPLE FREQUENCY OPERATION ASSOCIATED WITH LSA MODE [J].
CHILTON, RH ;
KENNEDY, WK .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (06) :1124-&
[5]  
KUROSAWA T, 1966, J PHYS SOC JPN, VS 21, P424
[6]   CALCULATION OF DISTRIBUTION FUNCTIONS BY EXPLOITING STABILITY OF STEADY STATE [J].
REES, HD .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1969, 30 (03) :643-&
[7]   HOT ELECTRON EFFECTS AT MICROWAVE FREQUENCIES IN GAAS [J].
REES, HD .
SOLID STATE COMMUNICATIONS, 1969, 7 (02) :267-&