HOT ELECTRON EFFECTS AT MICROWAVE FREQUENCIES IN GAAS

被引：60

作者：

REES, HD

机构：

[1] Royal Radar Establishment, Malvern, Worcestershire England

来源：

SOLID STATE COMMUNICATIONS | 1969年 / 7卷 / 02期

关键词：

D O I：

10.1016/0038-1098(69)90396-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The frequency dependence of the electron mobility in GaAs has been calculated numerically. Heating processes within the <000> valley control the response speed of the negative conductivity and cause the threshold field to rise with frequency. © 1969.

引用

页码：267 / &

共 7 条

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[5] CALCULATION OF STEADY STATE DISTRIBUTION FUNCTIONS BY EXPLOITING STABILITY [J].

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PHYSICS LETTERS A, 1968, A 26 (09) :416-&

[6]

REES HD, TO BE PUBLISHED

[7]

VLAARDINGERBROE.MT, TO BE PUBLISHED

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