EFFECT OF INTERVALLEY SCATTERING TIME ON LSA OSCILLATIONS

被引：15

作者：

OHMI, T

MURAYAMA, K

KANBE, H

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1968年 / 56卷 / 04期

关键词：

D O I：

10.1109/PROC.1968.6370

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：747 / +

页数：1

共 9 条

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[2] HIGH-FIELD DISTRIBUTION FUNCTION IN GAAS
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VASSELL, MO
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 22 - +
[3] CONWELL EM, 1966, P INT C PHYS SEMICON, P527
[4] LSA OSCILLATOR-DIODE THEORY
COPELAND, JA
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (08) : 3096 - +
[5] COPELAND JA, 1967, AUG C HIGH FREQ GEN
[6] COPELAND JA, 1967, FEB INT SOL CIRC C P
[7] TRANSPORT PROPERTIES OF A MANY-VALLEY SEMICONDUCTOR
HERRING, C
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (02): : 237 - 290
[8] A LIMITATION ON FREQUENCY OF GUNN EFFECT DUE TO INTERVALLEY SCATTERING TIME
OHMI, T
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (10): : 1739 - +
[9] OHMI T, TO BE PUBLISHED