STUDIES OF SUBMICRON GOLD ISLANDS ON SILICON BY STM

被引：8

作者：

GHEBER, LA

GORODETSKY, G

VOLTERRA, V

机构：

[1] Physics Department, Ben-Gurion University of the Negev, Beer-Sheva

来源：

THIN SOLID FILMS | 1994年 / 238卷 / 01期

关键词：

D O I：

10.1016/0040-6090(94)90637-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The formation and electrical properties of discrete islands in discontinuous Au films on Si(111) were studied with a scanning tunneling microscope (STM). Ohmic electrical contact between the STM tip and isolated gold islands was established and I-V characteristics of the Au-Si junctions were measured. A typical Schottky diode behaviour with ideality factor close to 1 was observed. The STM appears to be an appropriate probe for electrical measurements of nano-scale diodes.

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页码：1 / 3

页数：3

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