EFFECTS OF ELECTRODE MATERIALS ON SWITCHING BEHAVIOR OF AMORPHOUS-SEMICONDUCTOR SI12-GE10-AS30-TE48

被引:4
作者
PETRILLO, GA [1 ]
KAO, KC [1 ]
机构
[1] UNIV MANITOBA, ELECT ENGN DEPT, MAT RES LAB, WINNIPEG, MANITOBA, CANADA
关键词
D O I
10.1016/0022-3093(74)90128-8
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:247 / 257
页数:11
相关论文
共 13 条
[1]  
ALTUNYAN SA, 1970, SOV PHYS SEMICOND+, V4, P431
[2]   EFFECT OF DEPOSITION PARAMETERS ON STRUCTURE AND RESISTIVITY OF MOLYBDENUM FILMS [J].
BOSNELL, JR ;
VOISEY, UC .
THIN SOLID FILMS, 1970, 6 (02) :107-&
[3]  
Coward L. A., 1971, Journal of Non-Crystalline Solids, V6, P107, DOI 10.1016/0022-3093(71)90049-4
[4]  
Henisch H K, 1972, J NON-CRYST SOLIDS, V8-10, P415
[5]   CHARACTERISTICS OF OVONIC THRESHOLD SWITCHES WITH CRYSTALLINE SEMICONDUCTOR ELECTRODES [J].
HENISCH, HK ;
VENDURA, GJ .
APPLIED PHYSICS LETTERS, 1971, 19 (09) :363-&
[6]  
Manhart S., 1973, Journal of Non-Crystalline Solids, V11, P293, DOI 10.1016/0022-3093(73)90018-5
[7]   AMORPHOUS SEMICONDUCTORS FOR SWITCHING, MEMORY, AND IMAGING APPLICATIONS [J].
OVSHINSK.SR ;
FRITZSCH.H .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (02) :91-105
[8]   REVERSIBLE ELECTRICAL SWITCHING PHENOMENA IN DISORDERED STRUCTURES [J].
OVSHINSKY, SR .
PHYSICAL REVIEW LETTERS, 1968, 21 (20) :1450-+
[9]  
RHODES RG, 1964, INT SERIES MONOGRAPH, V6, P228
[10]   SPECIFIC NEGATIVE RESISTANCE IN SOLIDS [J].
RIDLEY, BK .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 82 (530) :954-&