FABRICATION OF FREESTANDING SINGLE-CRYSTAL SILICON WIRES

被引：11

作者：

POTTS, A

HASKO, DG

CLEAVER, JRA

AHMED, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 10期

关键词：

D O I：

10.1063/1.99299

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：834 / 835

页数：2

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[1] CHARACTERIZATION OF THE DUAL E-BEAM TECHNIQUE FOR RECRYSTALLIZING POLYSILICON FILMS
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AHMED, H
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) : 1919 - 1924
[2] FABRICATION OF ULTRA-THIN FREESTANDING WIRES OF SILICON-NITRIDE
LEE, KL
AHMED, H
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[J]. ELECTRONICS LETTERS, 1984, 20 (07) : 289 - 291
[3] THE PHYSICS AND FABRICATION OF ULTRA-THIN FREESTANDING WIRES
SMITH, C
AHMED, H
KELLY, MJ
WYBOURNE, MN
[J]. SUPERLATTICES AND MICROSTRUCTURES, 1985, 1 (02) : 153 - 154
[4] ELECTRIC-FIELD HEATING OF SUPPORTED AND FREESTANDING AUPD FINE WIRES
SMITH, CG
WYBOURNE, MN
[J]. SOLID STATE COMMUNICATIONS, 1986, 57 (06) : 411 - 416
[5] FABRICATION AND PHONON TRANSPORT STUDIES IN NANOMETER SCALE FREESTANDING WIRES
SMITH, CG
AHMED, H
WYBOURNE, MN
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01): : 314 - 317