CHARACTERIZATION OF THE DUAL E-BEAM TECHNIQUE FOR RECRYSTALLIZING POLYSILICON FILMS

被引：29

作者：

DAVIS, JR ^{[1
]}

MCMAHON, RA ^{[1
]}

AHMED, H ^{[1
]}

机构：

[1] CAMBRIDGE UNIV, DEPT ENGN, CAMBRIDGE IP5 7RE, ENGLAND

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 08期

关键词：

D O I：

10.1149/1.2114254

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1919 / 1924

页数：6

共 13 条

[1] AN ETCH PIT TECHNIQUE FOR ANALYZING CRYSTALLOGRAPHIC ORIENTATION IN SI FILMS
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) : 1848 - 1850
[2] Davis J. R., 1983, Laser-Solid Interactions and Transient Thermal Processing of Materials, P563
[3] RECRYSTALLIZATION OF CVD POLY-SI ON INSULATOR BY DUAL ELECTRON-BEAM PROCESSING
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AHMED, H
[J]. ELECTRONICS LETTERS, 1982, 18 (04) : 163 - 164
[4] TECHNIQUES FOR PRODUCING DEFECT-FREE SOI BY DUAL ELECTRON-BEAM HEATING OF DEPOSITED POLYSILICON
DAVIS, JR
MCMAHON, RA
AHMED, H
[J]. JOURNAL DE PHYSIQUE, 1983, 44 (NC-5): : 337 - 341
[5] ZONE-MELTING RECRYSTALLIZATION OF SI FILMS WITH A MOVEABLE-STRIP-HEATER OVEN
GEIS, MW
SMITH, HI
TSAUR, BY
FAN, JCC
SILVERSMITH, DJ
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (12) : 2812 - 2818
[6] CW LASER RECRYSTALLIZATION OF (100) SI ON AMORPHOUS SUBSTRATES
GIBBONS, JF
LEE, KF
MAGEE, TJ
PENG, J
ORMOND, R
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (12) : 831 - 833
[7] SILICON-ON-INSULATOR CMOS TRANSISTORS IN DUAL ELECTRON-BEAM RECRYSTALLIZED POLYSILICON
HOPPER, GF
DAVIS, JR
MCMAHON, RA
AHMED, H
[J]. ELECTRONICS LETTERS, 1984, 20 (12) : 500 - 501
[8] Kamgar A., 1982, Materials Letters, V1, P91, DOI 10.1016/0167-577X(82)90016-7
[9] MOSFETS IN ELECTRON-BEAM RECRYSTALLIZED POLYSILICON
KAMINS, TI
VONHERZEN, BP
[J]. ELECTRON DEVICE LETTERS, 1981, 2 (12): : 313 - 315
[10] McMahon R. A., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P783

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