MOSFETS IN ELECTRON-BEAM RECRYSTALLIZED POLYSILICON

[1] LATERAL EPITAXY BY SEEDED SOLIDIFICATION FOR GROWTH OF SINGLE-CRYSTAL SI FILMS ON INSULATORS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 365 - 367

[2] GAJDA WJ, 1973, NASA CR132348 CONTR, P26

[3] CW LASER ANNEAL OF POLYCRYSTALLINE SILICON - CRYSTALLINE-STRUCTURE, ELECTRICAL-PROPERTIES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (08) : 775 - 778

[4] GRAIN-BOUNDARIES IN P-N-JUNCTION DIODES FABRICATED IN LASER-RECRYSTALLIZED SILICON THIN-FILMS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (11) : 900 - 902

[5] MONOLITHIC INTEGRATED-CIRCUIT FABRICATED IN LASER-ANNEALED POLYSILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) : 290 - 293

[6] SURFACE STABILIZATION OF POLYCRYSTALLINE-SILICON FILMS DURING LASER RECRYSTALLIZATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (08) : 1824 - 1826

[7] MOSFETS IN LASER-RECRYSTALLIZED POLYSILICON ON QUARTZ [J]. ELECTRON DEVICE LETTERS, 1980, 1 (10): : 214 - 216

[8] THIN-FILM MOSFETS FABRICATED IN LASER-ANNEALED POLYCRYSTALLINE SILICON [J]. APPLIED PHYSICS LETTERS, 1979, 35 (02) : 173 - 175

[9] ELECTRON-BEAM RECRYSTALLIZATION OF CHEMICALLY VAPOR-DEPOSITED POLYSILICON FILMS [J]. THIN SOLID FILMS, 1979, 63 (01) : 195 - 195

[10] SILICON-ON-INSULATOR MOSFETS FABRICATED ON LASER-ANNEALED POLYSILICON ON SIO2 [J]. ELECTRONICS LETTERS, 1979, 15 (14) : 435 - 437

[1] LATERAL EPITAXY BY SEEDED SOLIDIFICATION FOR GROWTH OF SINGLE-CRYSTAL SI FILMS ON INSULATORS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 365 - 367

[2] GAJDA WJ, 1973, NASA CR132348 CONTR, P26

[3] CW LASER ANNEAL OF POLYCRYSTALLINE SILICON - CRYSTALLINE-STRUCTURE, ELECTRICAL-PROPERTIES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (08) : 775 - 778

[4] GRAIN-BOUNDARIES IN P-N-JUNCTION DIODES FABRICATED IN LASER-RECRYSTALLIZED SILICON THIN-FILMS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (11) : 900 - 902

[5] MONOLITHIC INTEGRATED-CIRCUIT FABRICATED IN LASER-ANNEALED POLYSILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) : 290 - 293

[6] SURFACE STABILIZATION OF POLYCRYSTALLINE-SILICON FILMS DURING LASER RECRYSTALLIZATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (08) : 1824 - 1826

[7] MOSFETS IN LASER-RECRYSTALLIZED POLYSILICON ON QUARTZ [J]. ELECTRON DEVICE LETTERS, 1980, 1 (10): : 214 - 216

[8] THIN-FILM MOSFETS FABRICATED IN LASER-ANNEALED POLYCRYSTALLINE SILICON [J]. APPLIED PHYSICS LETTERS, 1979, 35 (02) : 173 - 175

[9] ELECTRON-BEAM RECRYSTALLIZATION OF CHEMICALLY VAPOR-DEPOSITED POLYSILICON FILMS [J]. THIN SOLID FILMS, 1979, 63 (01) : 195 - 195

[10] SILICON-ON-INSULATOR MOSFETS FABRICATED ON LASER-ANNEALED POLYSILICON ON SIO2 [J]. ELECTRONICS LETTERS, 1979, 15 (14) : 435 - 437