LATERAL EPITAXY BY SEEDED SOLIDIFICATION FOR GROWTH OF SINGLE-CRYSTAL SI FILMS ON INSULATORS

被引：97

作者：

FAN, JCC

GEIS, MW

TSAUR, BY

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 05期

关键词：

D O I：

10.1063/1.92339

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：365 / 367

页数：3

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