SILICON-ON-INSULATOR MOSFETS FABRICATED ON LASER-ANNEALED POLYSILICON ON SIO2

被引：44

作者：

TASCH, AF ^{[1
]}

HOLLOWAY, TC ^{[1
]}

LEE, KF ^{[1
]}

GIBBONS, JF ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 14期

关键词：

Insulated-gate field-effect transistor;

D O I：

10.1049/el:19790312

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

N-channel-enhancement and light-depletion-mode m.o.s.f.e.t.s have been fabricated on laser-annealed 0-5 µm polysilicon films, deposited on 1 µm of SiO2 grown on single-crystal silicon substrates. Threshold voltages of 0·35–0·45 V and −0·5 − 0·7 V and surface mobilities of 170 cm2/Vs and 215 cm2/Vs were obtained on the enhancement and depletion devices, respectively. These results compare favourably with values realised in silicon-on-sapphire (s.o.s.) and bulk N-m.o.s. devices. In addition, the measured source-drain leakage currents match the best reported values for s.o.s. devices. © 1979, The Institution of Electrical Engineers. All rights reserved.

引用

页码：435 / 437

页数：3