ZONE-MELTING RECRYSTALLIZATION OF SI FILMS WITH A MOVEABLE-STRIP-HEATER OVEN

[1] ABE T, 1981, SEMICONDUCTOR SILICO, P54

[2] AN ETCH PIT TECHNIQUE FOR ANALYZING CRYSTALLOGRAPHIC ORIENTATION IN SI FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) : 1848 - 1850

[3] BIEGELSON DK, 1982, EL SOC EXT ABST 0509, P229

[4] MICROZONE RECRYSTALLIZATION OF SEMICONDUCTOR COMPOUND FILMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04): : 757 - &

[5] LASER-INDUCED MELT DYNAMICS OF SI AND SILICA [J]. PHYSICAL REVIEW LETTERS, 1981, 47 (16) : 1151 - 1155

[6] CAHN RW, 1970, PHYSICAL METALLURGY, pCH19

[7] CHIKAWA J, 1981, 1980 MAT RES SOC C B

[8] Fan J. C. C., 1980, International Electron Devices Meeting. Technical Digest

[9] LATERAL EPITAXY BY SEEDED SOLIDIFICATION FOR GROWTH OF SINGLE-CRYSTAL SI FILMS ON INSULATORS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 365 - 367

[10] SILICON GRAPHOEPITAXY USING A STRIP-HEATER OVEN [J]. APPLIED PHYSICS LETTERS, 1980, 37 (05) : 454 - 456

[1] ABE T, 1981, SEMICONDUCTOR SILICO, P54

[2] AN ETCH PIT TECHNIQUE FOR ANALYZING CRYSTALLOGRAPHIC ORIENTATION IN SI FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) : 1848 - 1850

[3] BIEGELSON DK, 1982, EL SOC EXT ABST 0509, P229

[4] MICROZONE RECRYSTALLIZATION OF SEMICONDUCTOR COMPOUND FILMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04): : 757 - &

[5] LASER-INDUCED MELT DYNAMICS OF SI AND SILICA [J]. PHYSICAL REVIEW LETTERS, 1981, 47 (16) : 1151 - 1155

[6] CAHN RW, 1970, PHYSICAL METALLURGY, pCH19

[7] CHIKAWA J, 1981, 1980 MAT RES SOC C B

[8] Fan J. C. C., 1980, International Electron Devices Meeting. Technical Digest

[9] LATERAL EPITAXY BY SEEDED SOLIDIFICATION FOR GROWTH OF SINGLE-CRYSTAL SI FILMS ON INSULATORS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 365 - 367

[10] SILICON GRAPHOEPITAXY USING A STRIP-HEATER OVEN [J]. APPLIED PHYSICS LETTERS, 1980, 37 (05) : 454 - 456