BOND-CENTERED INTERSTITIAL HYDROGEN IN SILICON - SEMIEMPIRICAL ELECTRONIC-STRUCTURE CALCULATIONS

被引：57

作者：

DELEO, GG ^{[1
]}

DOROGI, MJ ^{[1
]}

FOWLER, WB ^{[1
]}

机构：

[1] LEHIGH UNIV,SHERMAN FAIRCHILD CTR,BETHLEHEM,PA 18015

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.38.7520

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7520 / 7529

页数：10

共 42 条

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[2] ANISOTROPY OF THE ELECTRONIC G-FACTORS FOR ANOMALOUS MUONIUM IN SILICON AND GERMANIUM
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[7] STATE AND MOTION OF HYDROGEN IN CRYSTALLINE SILICON
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[J]. PHYSICAL REVIEW B, 1988, 37 (12): : 6887 - 6892
[8] THE SELF-TRAPPING OF HYDROGEN IN SEMICONDUCTORS
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[J]. PHYSICS LETTERS A, 1988, 126 (07) : 427 - 430
[9] THEORY OF OFF-CENTER IMPURITIES IN SILICON - SUBSTITUTIONAL NITROGEN AND OXYGEN
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[J]. PHYSICAL REVIEW B, 1984, 29 (06): : 3193 - 3207
[10] ELECTRONIC-STRUCTURE OF HYDROGEN-METAL-VACANCY AND ALKALI-METAL-VACANCY COMPLEXES IN SILICON
DELEO, GG
FOWLER, WB
WATKINS, GD
[J]. PHYSICAL REVIEW B, 1984, 29 (04): : 1819 - 1823

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