ABSORPTION OF OXYGEN IN SILICON IN NEAR AND FAR INFRARED

[1] FAR INFRARED SPECTRUM AND STRUCTURE OF DISILOXANE [J]. JOURNAL OF CHEMICAL PHYSICS, 1960, 33 (04) : 1004 - 1007

[2] BENSKI G, 1958, B AM PHYS SOC, V3, P135

[3] CHRENKO RM, 1965, PHYS REV, V138, P1775

[4] INFRARED LATTICE ABSORPTION BANDS IN GERMANIUM, SILICON, AND DIAMOND [J]. PHYSICAL REVIEW, 1954, 93 (04): : 674 - 678

[5] NEW OXYGEN INFRARED BANDS IN ANNEALED IRRADIATED SILICON [J]. PHYSICAL REVIEW, 1964, 135 (5A): : 1381 - +

[6] CONFIGURATION + DIFFUSION OF ISOLATED OXYGEN IN SILICON + GERMANIUM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (08) : 873 - &

[7] DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER [J]. PHYSICAL REVIEW, 1961, 121 (04): : 1015 - &

[8] THEORY OF OPTICAL ABSORPTION BY VIBRATIONS OF DEFECTS IN SILICON [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 81 (521): : 453 - &

[9] Eaborn C., 1960, ORGANOSILICON COMPOU

[10] FAN HY, 1951, P READING C SEMICOND

[1] FAR INFRARED SPECTRUM AND STRUCTURE OF DISILOXANE [J]. JOURNAL OF CHEMICAL PHYSICS, 1960, 33 (04) : 1004 - 1007

[2] BENSKI G, 1958, B AM PHYS SOC, V3, P135

[3] CHRENKO RM, 1965, PHYS REV, V138, P1775

[4] INFRARED LATTICE ABSORPTION BANDS IN GERMANIUM, SILICON, AND DIAMOND [J]. PHYSICAL REVIEW, 1954, 93 (04): : 674 - 678

[5] NEW OXYGEN INFRARED BANDS IN ANNEALED IRRADIATED SILICON [J]. PHYSICAL REVIEW, 1964, 135 (5A): : 1381 - +

[6] CONFIGURATION + DIFFUSION OF ISOLATED OXYGEN IN SILICON + GERMANIUM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (08) : 873 - &

[7] DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER [J]. PHYSICAL REVIEW, 1961, 121 (04): : 1015 - &

[8] THEORY OF OPTICAL ABSORPTION BY VIBRATIONS OF DEFECTS IN SILICON [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 81 (521): : 453 - &

[9] Eaborn C., 1960, ORGANOSILICON COMPOU

[10] FAN HY, 1951, P READING C SEMICOND