CONFIGURATION + DIFFUSION OF ISOLATED OXYGEN IN SILICON + GERMANIUM

[1] INTERSTITIAL VERSUS SUBSTITUTIONAL OXYGEN IN SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (1-2) : 44 - 45

[2] STRESS-INDUCED ALIGNMENT OF ANISOTROPIC DEFECTS IN CRYSTALS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 20 (3-4) : 319 - 320

[3] DESIRANT M, 1960, SOLID STATE PHYSICS, V1, P240

[4] Fan H Y, 1951, SEMICONDUCTING MATER, P132

[5] THE DIFFUSION OF OXYGEN IN SILICON AND GERMANIUM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 15 (1-2) : 108 - 111

[6] HENISCH HK, 1951, SEMICONDUCTOR MATERI, P132

[7] INFRARED ABSORPTION OF OXYGEN IN SILICON [J]. PHYSICAL REVIEW, 1957, 107 (04): : 966 - 972

[8] EVIDENCE FOR INTERNAL ROTATION IN THE FINE STRUCTURE OF THE INFRARED ABSORPTION OF OXYGEN IN SILICON [J]. JOURNAL OF CHEMICAL PHYSICS, 1960, 33 (04) : 980 - 990

[9] INFRARED ABSORPTION AND OXYGEN CONTENT IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1956, 101 (04): : 1264 - 1268

[10] DIFFUSION OF OXYGEN IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (11) : 1627 - 1630

[1] INTERSTITIAL VERSUS SUBSTITUTIONAL OXYGEN IN SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (1-2) : 44 - 45

[2] STRESS-INDUCED ALIGNMENT OF ANISOTROPIC DEFECTS IN CRYSTALS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 20 (3-4) : 319 - 320

[3] DESIRANT M, 1960, SOLID STATE PHYSICS, V1, P240

[4] Fan H Y, 1951, SEMICONDUCTING MATER, P132

[5] THE DIFFUSION OF OXYGEN IN SILICON AND GERMANIUM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 15 (1-2) : 108 - 111

[6] HENISCH HK, 1951, SEMICONDUCTOR MATERI, P132

[7] INFRARED ABSORPTION OF OXYGEN IN SILICON [J]. PHYSICAL REVIEW, 1957, 107 (04): : 966 - 972

[8] EVIDENCE FOR INTERNAL ROTATION IN THE FINE STRUCTURE OF THE INFRARED ABSORPTION OF OXYGEN IN SILICON [J]. JOURNAL OF CHEMICAL PHYSICS, 1960, 33 (04) : 980 - 990

[9] INFRARED ABSORPTION AND OXYGEN CONTENT IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1956, 101 (04): : 1264 - 1268

[10] DIFFUSION OF OXYGEN IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (11) : 1627 - 1630