INTERSTITIAL VERSUS SUBSTITUTIONAL OXYGEN IN SILICON

被引：69

作者：

BOND, WL

KAISER, W

机构：

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1960年 / 16卷 / 1-2期

关键词：

D O I：

10.1016/0022-3697(60)90069-X

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：44 / 45

页数：2

共 10 条

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[6] FACTORS DETERMINING THE OXYGEN CONTENT OF LIQUID SILICON AT ITS MELTING POINT [J].

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[7] OXYGEN CONTENT OF SILICON SINGLE CRYSTALS [J].

KAISER, W ;

KECK, PH .

JOURNAL OF APPLIED PHYSICS, 1957, 28 (08) :882-887

[8] INFRARED ABSORPTION AND OXYGEN CONTENT IN SILICON AND GERMANIUM [J].

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LANGE, CF .

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[9]

LOGAN RA, J APPL PHYS

[10] OXYGEN IMPURITY IN SILICON SINGLE CRYSTALS [J].

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KALNAJS, J .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 6 (01) :46-50

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