STRESS-INDUCED ALIGNMENT OF ANISOTROPIC DEFECTS IN CRYSTALS

被引：13

作者：

CORBETT, JW

WATKINS, GD

机构：

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1961年 / 20卷 / 3-4期

关键词：

D O I：

10.1016/0022-3697(61)90021-X

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：319 / 320

页数：2

共 21 条

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[4]

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[6]

FEOFILOV PP, 1953, DOKL AKAD NAUK SSSR+, V92, P545

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[8] THE SOLUBILITY OF OXYGEN IN SILICON [J].

HROSTOWSKI, HJ ;

KAISER, RH .

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[9] INFRARED ABSORPTION OF OXYGEN IN SILICON [J].

HROSTOWSKI, HJ ;

KAISER, RH .

PHYSICAL REVIEW, 1957, 107 (04) :966-972

[10] EVIDENCE FOR INTERNAL ROTATION IN THE FINE STRUCTURE OF THE INFRARED ABSORPTION OF OXYGEN IN SILICON [J].

HROSTOWSKI, HJ ;

ALDER, BJ .

JOURNAL OF CHEMICAL PHYSICS, 1960, 33 (04) :980-990

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