DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER

被引：329

作者：

CORBETT, JW

WATKINS, GD

CHRENKO, RM

MCDONALD, RS

机构：

来源：

PHYSICAL REVIEW | 1961年 / 121卷 / 04期

关键词：

D O I：

10.1103/PhysRev.121.1015

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1015 / &

共 24 条

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[10] INFRARED ABSORPTION OF OXYGEN IN SILICON [J].

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