DIFFUSION OF OXYGEN IN SILICON

被引：56

作者：

LOGAN, RA

PETERS, AJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1959年 / 30卷 / 11期

关键词：

D O I：

10.1063/1.1735025

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1627 / 1630

页数：4

共 15 条

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[2] SURFACE PROTECTION AND SELECTIVE MASKING DURING DIFFUSION IN SILICON [J].

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DERICK, L .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (09) :547-552

[3] INTERACTIONS BETWEEN OXYGEN AND ACCEPTOR ELEMENTS IN SILICON [J].

FULLER, CS ;

DOLEIDEN, FH .

JOURNAL OF APPLIED PHYSICS, 1958, 29 (08) :1264-1265

[4] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J].

FULLER, CS ;

DITZENBERGER, JA .

JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) :544-553

[5] EFFECT OF HEAT TREATMENT UPON THE ELECTRICAL PROPERTIES OF SILICON CRYSTALS [J].

FULLER, CS ;

LOGAN, RA .

JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) :1427-1436

[6]

HROSTOWSKI HJ, UNPUBLISHED

[7] ELECTRICAL AND OPTICAL PROPERTIES OF HEAT-TREATED SILICON [J].

KAISER, W .

PHYSICAL REVIEW, 1957, 105 (06) :1751-1756

[8] FACTORS DETERMINING THE OXYGEN CONTENT OF LIQUID SILICON AT ITS MELTING POINT [J].

KAISER, W ;

BRESLIN, J .

JOURNAL OF APPLIED PHYSICS, 1958, 29 (09) :1292-1294

[9] OXYGEN CONTENT OF SILICON SINGLE CRYSTALS [J].

KAISER, W ;

KECK, PH .

JOURNAL OF APPLIED PHYSICS, 1957, 28 (08) :882-887

[10] BEHAVIOR OF OXYGEN IN PLASTICALLY DEFORMED SILICON [J].

LEDERHANDLER, S ;

PATEL, JR .

PHYSICAL REVIEW, 1957, 108 (02) :239-242

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