MESOTAXY - SINGLE-CRYSTAL GROWTH OF BURIED COSI2 LAYERS

[1] BADOZ PA, 1985, J PHYS LETT-PARIS, V46, pL979, DOI 10.1051/jphyslet:019850046020097900

[2] CAMPISI GJ, 1986, MATER RES SOC S P, V54, P747

[3] GELD PV, 1971, SILITSIDI PEREKHODNI

[4] HEMMENT PLF, 1986, MATERIALS RESEARCH S, V53, P207

[5] ELECTRICAL TRANSPORT-PROPERTIES OF COSI2 AND NISI2 THIN-FILMS [J]. APPLIED PHYSICS LETTERS, 1984, 44 (09) : 913 - 915

[6] HENSEL JC, 1986, MATER RES SOC S P, V54, P499

[7] HENSEL JC, COMMUNICATION

[8] LIMITS OF COMPOSITION ACHIEVABLE BY ION-IMPLANTATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (05): : 1629 - 1635

[9] NEWCOMBE G, COMMUNICATION

[10] SANCHEZ FH, 1986, MATERIALS RES SOC S, V51, P439

[1] BADOZ PA, 1985, J PHYS LETT-PARIS, V46, pL979, DOI 10.1051/jphyslet:019850046020097900

[2] CAMPISI GJ, 1986, MATER RES SOC S P, V54, P747

[3] GELD PV, 1971, SILITSIDI PEREKHODNI

[4] HEMMENT PLF, 1986, MATERIALS RESEARCH S, V53, P207

[5] ELECTRICAL TRANSPORT-PROPERTIES OF COSI2 AND NISI2 THIN-FILMS [J]. APPLIED PHYSICS LETTERS, 1984, 44 (09) : 913 - 915

[6] HENSEL JC, 1986, MATER RES SOC S P, V54, P499

[7] HENSEL JC, COMMUNICATION

[8] LIMITS OF COMPOSITION ACHIEVABLE BY ION-IMPLANTATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (05): : 1629 - 1635

[9] NEWCOMBE G, COMMUNICATION

[10] SANCHEZ FH, 1986, MATERIALS RES SOC S, V51, P439